| PART |
Description |
Maker |
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| 5962D9567002VCA 5962D9567002VCC 5962D9567002VGA HS |
Low Power, High Performance Radiation Hardened Operational Amplifier OP-AMP, 1 MHz BAND WIDTH, CDIP14
CAP 47UF 4V 25V TANT SMD-7343-43 TR-7 LOWESR-100
CONNECTOR ACCESSORY
Low Power/ High Performance Radiation Hardened Operational Amplifier
|
Intersil, Corp.
Intersil Corporation
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 5962F9853501VEC 5962F9853501VXC ACTS138D ACTS138DM |
Radiation Hardened TTL Input, 3-to-8 Line Decoder/Demultiplexer ACT SERIES, OTHER DECODER/DRIVER, INVERTED OUTPUT, UUC16
Radiation Hardened
TTL Input, 3-to-8 Line Decoder/Demultiplexer(抗辐射TTL输入-8线译码器/多路信号分离
CAP 4-ARRAY 68000PF 16V X7R 1206
Radiation Hardened TTL Input/ 3-to-8 Line Decoder/Demultiplexer
|
Intersil, Corp.
Intersil Corporation
|
| FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HCTS374D HCTS374DMSR HCTS374HMSR HCTS374K HCTS374K |
From old datasheet system
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
Radiation Hardened Octal Transparent Latch/ Three-State
|
INTERSIL[Intersil Corporation]
|
| IRHN57250SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package 20000kRad高可靠性单N通道看到一贴片MOSFET的硬 1封装
RADIATION HARDENED POWER MOSFET
|
International Rectifier, Corp.
|
| 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
